Back to Search
Start Over
Measurement and Simulation of Boron Diffusion in Strained Si[sub 1-x]Ge[sub x] Epitaxial Layers.
- Source :
- IEEE Transactions on Electron Devices; Sep2001, Vol. 48 Issue 9, p2022, 10p, 6 Black and White Photographs, 1 Diagram, 1 Chart, 7 Graphs
- Publication Year :
- 2001
-
Abstract
- Presents a study which measured boron and germanium (Ge) concentration profiles in rapid thermal and furnace annealed silicon (Si)-doped, epitaxial layers. Experimental procedure; Mathematical model for boron diffusion; Results and discussion; Conclusion.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 48
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 5117761
- Full Text :
- https://doi.org/10.1109/16.944192