Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer.

MLA

Shinhyuk Yang, et al. “Improvement in the Photon-Induced Bias Stability of Al–Sn–Zn–In–O Thin Film Transistors by Adopting AlOx Passivation Layer.” Applied Physics Letters, vol. 96, no. 21, May 2010, p. 213511. EBSCOhost, https://doi.org/10.1063/1.3432445.

APA

Shinhyuk Yang, Doo-Hee Cho, Min Ki Ryu, Sang-Hee Ko Park, Chi-Sun Hwang, Jin Jang, & Jae Kyeong Jeong. (2010). Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer. Applied Physics Letters, 96(21), 213511. https://doi.org/10.1063/1.3432445

Chicago

Shinhyuk Yang, Doo-Hee Cho, Min Ki Ryu, Sang-Hee Ko Park, Chi-Sun Hwang, Jin Jang, and Jae Kyeong Jeong. 2010. “Improvement in the Photon-Induced Bias Stability of Al–Sn–Zn–In–O Thin Film Transistors by Adopting AlOx Passivation Layer.” Applied Physics Letters 96 (21): 213511. doi:10.1063/1.3432445.