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Ellipsometric study of InAs wetting layer in InAs/GaAs quantum dots at the threshold of quantum dot formation.
- Source :
- Journal of Applied Physics; 9/1/2001, Vol. 90 Issue 5, 5 Graphs
- Publication Year :
- 2001
-
Abstract
- Using room temperature spectroscopic ellipsometry, we measured the pseudo-dielectric function of self-assembled InAs/GaAs quantum dots at the onset of quantum-dot nucleation in the spectral range from 0.8 to 6 eV. The nominal In coverage varied from 1 to 2.6 ML. In addition to the quantum-dot-related feature at 1.1 eV, we observed two high energy transitions near 1.34 and 1.38 eV which arose from the InAs wetting layer. These two high energy features merged in 1-ML-thick wetting layer. We fitted the dielectric function of InAs wetting layer in the visible range performing multilayer analysis, and found strong excitonic enhancement and blue shift of the E[sub 1] peak. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- WETTING
QUANTUM dots
ELLIPSOMETRY
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 90
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 5062075
- Full Text :
- https://doi.org/10.1063/1.1391413