Ellipsometric study of single-crystal γ-InSe from 1.5 to 9.2 eV.

Authors :: Choi, S. G.
Aspnes, D. E.
Fuchser, A. L.
Martinez-Tomas, C.
Sanjosé, V. Muñoz
Levi, D. H.
Source :: Applied Physics Letters; 5/3/2010, Vol. 96 Issue 18, p181902, 3p, 1 Chart, 3 Graphs
Publication Year :: 2010
Abstract: We report the component E[accent:_right_hook_over]⊥c⁁ of the pseudodielectric-function tensor <[variant_greek_epsilon](E)>=<[variant_greek_epsilon]<subscript>1</subscript>(E)>+i<[variant_greek_epsilon]<subscript>2</subscript>(E)> of γ-phase single-crystal InSe, obtained from 1.5 to 9.2 eV by vacuum-ultraviolet spectroscopic ellipsometry with the sample at room temperature. Overlayer artifacts were reduced as far as possible by measuring fresh surfaces prepared by cleavage. Accurate critical-point energies of observed structures were obtained by a combined method of spectral analysis. [ABSTRACT FROM AUTHOR]