Combined Nanoscale and Device-Level Degradation Analysis of SiO2 Layers of MOS Nonvolatile Memory Devices.

Details

Language :

English

ISSN :

15304388

Volume :

9

Issue :

4

Database :

Complementary Index

Journal :

IEEE Transactions on Device & Materials Reliability

Publication Type :

Academic Journal

Accession number :

50141040

Full Text :

https://doi.org/10.1109/TDMR.2009.2027228