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The effect of strained Al0.7In0.3As emitter layers on abrupt N-p+ AllnAs-GaInAs heterojunction diodes and heterojunction bipolar transistors.
- Source :
- Journal of Electronic Materials; Aug2002, Vol. 31 Issue 8, p841-847, 7p
- Publication Year :
- 2002
-
Abstract
- Strained Al<subscript>x</subscript>In<subscript>1−x</subscript>As/Ga<subscript>0.47</subscript>In<subscript>0.53</subscript>As heterojunction N-p<superscript>+</superscript> diodes and heterojunction bipolar transistors (HBTs) have been grown on InP substrates by solid-source molecular-beam epitaxy, fabricated, and characterized. To determine the effects of the conduction-band discontinuity at the emitter-base heterojunction on turn-on voltage and ideality factor, a strained Al<subscript>0.7</subscript>In<subscript>0.3</subscript>As layer is inserted in the emitter near the base. Changes in transport across the junction are observed as a function of the strained-layer position and thickness. These results were used to implement strained emitter HBTs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03615235
- Volume :
- 31
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- Journal of Electronic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 50080770
- Full Text :
- https://doi.org/10.1007/s11664-002-0193-5