Effect of carbon on lattice strain and hole mobility in Si1- xGe x alloys.

MLA

Kar, G., et al. “Effect of Carbon on Lattice Strain and Hole Mobility in Si1- XGe x Alloys.” Journal of Materials Science: Materials in Electronics, vol. 13, no. 1, Jan. 2002, pp. 49–55. EBSCOhost, https://doi.org/10.1023/A:1013103232208.

APA

Kar, G., Dhar, A., Bera, L., Ray, S., John, S., & Banerjee, S. (2002). Effect of carbon on lattice strain and hole mobility in Si1- xGe x alloys. Journal of Materials Science: Materials in Electronics, 13(1), 49–55. https://doi.org/10.1023/A:1013103232208

Chicago

Kar, G., A. Dhar, L. Bera, S. Ray, S. John, and S. Banerjee. 2002. “Effect of Carbon on Lattice Strain and Hole Mobility in Si1- XGe x Alloys.” Journal of Materials Science: Materials in Electronics 13 (1): 49–55. doi:10.1023/A:1013103232208.