Growth and properties of LnIn3S6 crystals.

LnIn₃S₆ (Ln = La, Nd, Yb) crystals were grown by chemical vapor transport. All the LnIn₃S₆ compounds were shown to be isostructural and to crystallize in orthorhombic symmetry (sp. gr. Pbam, Z = 4; a = 4.06-3.80 Å, b = 11.84-11.62 Å, c = 21.35-20.94 Å). The LnIn₃S₆ compounds are n-type semiconductors, with a band gap increasing from 1.03 to 1.27 eV in going from LaIn₃S₆ to LuIn₃S₆. Current-voltage, current-light, and photocurrent measurements demonstrate that LaIn₃S₆, SmIn₃S₆, GdIn₃S₆, HoIn₃S₆, and DyIn₃S₆ crystals are photosensitive in the near-IR spectral region. [ABSTRACT FROM AUTHOR]