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Possible Mechanism of a New Type of Three-Dimensional Quantized Hall Effect in Layered Semiconductors Bi2−xSnxTe3.
- Source :
- Journal of Low Temperature Physics; May2001, Vol. 123 Issue 3/4, p219-238, 20p
- Publication Year :
- 2001
-
Abstract
- We have found a new type of three-dimensional quantized Hall effect (QHE) in layered semiconductors Bi<subscript>2</subscript>−xSn<subscript>x</subscript>Te<subscript>3</subscript> (x≤0.0125) single crystals. The Hall resistivity is not expressed in a universal relation applicable for a conventional QHE and depends appreciably on the doped Sn concentration x. The flat Hall plateaus are visible at higher Landau levels but are rather suppressed at lower regions. The calculated Landau levels of the upper valence band (UVB) with the best-fit band parameters are in excellent agreement with the experiments, including spin splitting. For Bi<subscript>2</subscript>−xSn<subscript>x</subscript>Te<subscript>3</subscript>, the Sn-originated impurity band (IB) has resonant nature and enhances the density of states at the Fermi level of UVB. The charge transfer occurs between the quantized UVB and the resonant IB or the lower valence band (LVB) for Bi<subscript>2</subscript>−xSn<subscript>x</subscript>Te<subscript>3</subscript> or Bi<subscript>2</subscript>Te<subscript>3</subscript>, respectively, and the Landau levels are enhanced appreciably. We have revealed that the quasi-localized states are formed in quantized three-dimensional density of state spectra. We have proposed a possible model for the present QHE, which is a modification of Mani's model, where the quasi-localized state is formed at the disorder-originated tail of each Landau level. In the quasi-localized regime, the IB or LVB are responsible for the carrier reservoir to regulate the Hall resistivity. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00222291
- Volume :
- 123
- Issue :
- 3/4
- Database :
- Complementary Index
- Journal :
- Journal of Low Temperature Physics
- Publication Type :
- Academic Journal
- Accession number :
- 49855275
- Full Text :
- https://doi.org/10.1023/A:1017541912810