Efficient full-flow process simulation for 3D structures including stress modeling.

The need to use 3D process simulation increases as device dimensions shrink and new 3D device designs emerge. Moreover, many state-of-the art CMOS devices employ some sort of stress engineering, which necessitates 3D stress simulations. To perform these simulations efficiently and quickly, new methodologies need to be employed. In this paper we demonstrate several applications of the next generation TCAD tools to 3D simulation problems critical for understanding and development of modern devices. [ABSTRACT FROM AUTHOR]