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Atomic scale epitaxial growth of BaTiO3 thin films by laser molecular beam epitaxy.
- Source :
- Science in China. Series A: Mathematics, Physics & Astronomy; May1997, Vol. 40 Issue 5, p522-527, 6p
- Publication Year :
- 1997
-
Abstract
- By using laser molecular beam epitaxy (L-MBE), atomic scale epitaxid growth of BaTiO<subscript>3</subscript>(BTO) thin films on SrTiO<subscript>3</subscript> (STO) substrates is achieved. Measurements of reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), scanning electron microscopy, and transmission electron microscopy reveal that the BTO films are c-axis oriented single crystals with smooth surface. The multi-layer ferroelectric/superconducting heterostructures are also prepared and the ferroelectric properties of BTO films are studied. The results show that by using L-MBE technique, high quality BTO films and improved device performance can be obtained. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10069283
- Volume :
- 40
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Science in China. Series A: Mathematics, Physics & Astronomy
- Publication Type :
- Academic Journal
- Accession number :
- 49371592
- Full Text :
- https://doi.org/10.1007/BF02896960