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Effects of ion irradiation on the residual stresses in Cr thin films.

Authors :
Misra, A.
Fayeulle, S.
Kung, H.
Mitchell, T. E.
Nastasi, M.
Source :
Applied Physics Letters; 8/17/1998, Vol. 73 Issue 7, 7 Black and White Photographs, 3 Graphs
Publication Year :
1998

Abstract

Cr films sputtered onto {100} Si substrates at room temperature were found to be under residual tension, as revealed by wafer curvature measurements. A 150 nm thick Cr film was bombarded with 300 keV Ar ions after deposition. The intrinsic residual tensile stress increased slightly and then decreased with further increase in the ion dose. For ion doses >1×10[sup 15] ions/cm[sup 2], the stress in the film became compressive and increased with increasing dose. Transmission electron microscopy revealed that the grain boundaries in as-deposited Cr have columnar porosity. A Cr film, ion irradiated to a dose of 5×10[sup 15] ions/cm[sup 2], showed no grain boundary porosity. The changes in the residual stress during ion irradiation are explained by considering Ar incorporation in the film and the manner in which irradiation may change the interatomic distances and forces. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
73
Issue :
7
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
4872760
Full Text :
https://doi.org/10.1063/1.122029