Hydrogen-decorated lattice defects in proton implanted GaN.

Several vibrational bands were observed near 3100 cm[sup -1] in GaN that had been implanted with hydrogen at room temperature and subsequently annealed. Our results indicate that these bands are due to nitrogen-dangling-bond defects created by the implantation that are decorated by hydrogen. The frequencies are close to those predicted recently for V[sub Ga]–H[sub n] complexes, leading us to tentatively assign the new lines to V[sub Ga] defects decorated with different numbers of H atoms. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]