Chemical kinetics of mobile-proton generation and annihilation in SiO[sub 2] thin films.

The chemical kinetics of mobile-proton reactions in the SiO[sub 2] film of Si/SiO[sub 2]/Si structures were analyzed as a function of forming-gas anneal parameters in the 300–600 °C temperature range. Our data show that the initial buildup of mobile protons is limited by the rate of lateral hydrogen diffusion into the SiO[sub 2] films. The final density of mobile protons is determined by the cooling rate which terminates the annealing process and, in the case of subsequent anneals, by the temperature of the final anneal. To explain the observations, we propose a dynamical equilibrium model which assumes a reversible interfacial reaction with a temperature-dependent balance. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]