Back to Search
Start Over
Efficient gettering of low concentrations of copper contamination to hydrogen induced nanocavities in silicon.
- Source :
- Applied Physics Letters; 11/2/1998, Vol. 73 Issue 18
- Publication Year :
- 1998
-
Abstract
- The efficient gettering to hydrogen-induced cavities in Si has been successfully demonstrated for low concentrations of Cu, unintentionally introduced during wafer processing. Secondary ion mass spectrometry showed up to 5×10[sup 12] cm[sup -2]Cu could be introduced into a silicon wafer and trapped at cavities. Neutron activation analysis indicated that, in samples with cavities, the Cu within the bulk was below the detection limit (around 4×10[sup 11] cm[sup -2]), while Cu was detected throughout the bulk of samples without cavities. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- COPPER
SEMICONDUCTOR wafers
GETTERS
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 73
- Issue :
- 18
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4812527
- Full Text :
- https://doi.org/10.1063/1.122538