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Efficient gettering of low concentrations of copper contamination to hydrogen induced nanocavities in silicon.

Authors :
Kinomura, A.
Williams, J. S.
Wong-Leung, J.
Petravic, M.
Nakano, Y.
Hayashi, Y.
Source :
Applied Physics Letters; 11/2/1998, Vol. 73 Issue 18
Publication Year :
1998

Abstract

The efficient gettering to hydrogen-induced cavities in Si has been successfully demonstrated for low concentrations of Cu, unintentionally introduced during wafer processing. Secondary ion mass spectrometry showed up to 5×10[sup 12] cm[sup -2]Cu could be introduced into a silicon wafer and trapped at cavities. Neutron activation analysis indicated that, in samples with cavities, the Cu within the bulk was below the detection limit (around 4×10[sup 11] cm[sup -2]), while Cu was detected throughout the bulk of samples without cavities. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Subjects

Subjects :
COPPER
SEMICONDUCTOR wafers
GETTERS

Details

Language :
English
ISSN :
00036951
Volume :
73
Issue :
18
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
4812527
Full Text :
https://doi.org/10.1063/1.122538