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Transimpedance Amplifier-Based Full Low-Frequency Noise Characterization Setup for Si/SiGe HBTs.
- Source :
- IEEE Transactions on Electron Devices; Apr2001, Vol. 48 Issue 4, p767, 7p, 5 Black and White Photographs, 2 Diagrams, 1 Chart, 4 Graphs
- Publication Year :
- 2001
-
Abstract
- Presents information on a study which implemented an experimental setup based on current/voltage conversion through transimpedance amplifiers for the direct full low-frequency noise (LFN) characterization of heterojunction bipolar transistors (HBT). Transimpedance measurement setup description; Buffer amplifier for transimpedance setup improvement; Si/SiGe HBT LFN characterizations.
- Subjects :
- ELECTRONIC amplifiers
ELECTRIC noise
BIPOLAR transistors
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 48
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 4794206
- Full Text :
- https://doi.org/10.1109/16.915724