Back to Search Start Over

Thermal modeling and experimental study of infrared nanosecond laser ablation of silicon.

Authors :
Tao, Sha
Wu, Benxin
Zhou, Yun
Gao, Yibo
Source :
Journal of Applied Physics; Dec2009, Vol. 106 Issue 12, p123507-1-123507-5, 5p, 2 Diagrams, 1 Chart, 7 Graphs
Publication Year :
2009

Abstract

Nanosecond (ns) laser ablation of silicon has important applications in electronics, photovoltaics, and many other areas. However, most of the previous work is mainly focused on ultraviolet (UV) or visible ns lasers, and the investigation is very limited for infrared lasers (e.g., at 1064 nm), which have the advantage of much lower cost and external energy consumption. In this paper, a thermal model has been developed and experimentally verified for ablation of silicon by 200 ns and 1064 nm laser pulses. This kind of work has been rarely reported in literature. The model predictions agree reasonably well with experimental measurements. The investigation indicates that surface evaporation should be the dominant physical mechanism of material removal for laser silicon ablation under the studied conditions. It has also been found that the physical processes of multipulse laser-silicon interaction at 1064 nm may strongly depend on laser pulse number and repetition rate (the pulse-to-pulse temporal distance). [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
106
Issue :
12
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
47244304
Full Text :
https://doi.org/10.1063/1.3271413