Cite
Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors.
MLA
Marchand, H., et al. “Metalorganic Chemical Vapor Deposition of GaN on Si(111): Stress Control and Application to Field-Effect Transistors.” Journal of Applied Physics, vol. 89, no. 12, June 2001, p. 7846. EBSCOhost, https://doi.org/10.1063/1.1372160.
APA
Marchand, H., Zhao, L., Zhang, N., Moran, B., Coffie, R., Mishra, U. K., Speck, J. S., DenBaars, S. P., & Freitas, J. A. (2001). Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors. Journal of Applied Physics, 89(12), 7846. https://doi.org/10.1063/1.1372160
Chicago
Marchand, H., L. Zhao, N. Zhang, B. Moran, R. Coffie, U. K. Mishra, J. S. Speck, S. P. DenBaars, and J. A. Freitas. 2001. “Metalorganic Chemical Vapor Deposition of GaN on Si(111): Stress Control and Application to Field-Effect Transistors.” Journal of Applied Physics 89 (12): 7846. doi:10.1063/1.1372160.