Studies of damage in low-power reactive-ion etching of III-V semiconductors.

MLA

Rahman, M., et al. “Studies of Damage in Low-Power Reactive-Ion Etching of III-V Semiconductors.” Journal of Applied Physics, vol. 89, no. 4, Feb. 2001, p. 2096. EBSCOhost, https://doi.org/10.1063/1.1342019.

APA

Rahman, M., Deng, L. G., Wilkinson, C. D. W., & van den Berg, J. A. (2001). Studies of damage in low-power reactive-ion etching of III-V semiconductors. Journal of Applied Physics, 89(4), 2096. https://doi.org/10.1063/1.1342019

Chicago

Rahman, M., L. G. Deng, C. D. W. Wilkinson, and J. A. van den Berg. 2001. “Studies of Damage in Low-Power Reactive-Ion Etching of III-V Semiconductors.” Journal of Applied Physics 89 (4): 2096. doi:10.1063/1.1342019.