Gate-First A1GaN/GaN HEMT Technology for High-Frequency Applications.

MLA

Saadat, Omair I., et al. “Gate-First A1GaN/GaN HEMT Technology for High-Frequency Applications.” IEEE Electron Device Letters, vol. 30, no. 12, Dec. 2009, pp. 1254–56. EBSCOhost, https://doi.org/10.1109/LED.2009.2032938.

APA

Saadat, O. I., Chung, J. W., Piner, E. L., & Palacios, T. (2009). Gate-First A1GaN/GaN HEMT Technology for High-Frequency Applications. IEEE Electron Device Letters, 30(12), 1254–1256. https://doi.org/10.1109/LED.2009.2032938

Chicago

Saadat, Omair I., Jinwook W. Chung, Edwin L. Piner, and Tomás Palacios. 2009. “Gate-First A1GaN/GaN HEMT Technology for High-Frequency Applications.” IEEE Electron Device Letters 30 (12): 1254–56. doi:10.1109/LED.2009.2032938.