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An A1N/Ultrathin A1GaN/GaN HEMT Structure for Enhancement-Mode Operation Using Selective Etching.
- Source :
- IEEE Electron Device Letters; Dec2009, Vol. 30 Issue 12, p1251-1253, 3p, 2 Graphs
- Publication Year :
- 2009
-
Abstract
- A novel device structure incorporating an ultrathin AIGaN barrier layer capped by an AIN layer in the source-drain access regions has been implemented to reliably control threshold voltage in AIGaN/GaN high-electron-mobility transistors. A recessed-gate structure has been used to decrease 2-D electron gas (2DEG) density under the gate, thus controlling threshold voltage while maintaining low on-resistance and high current density. The structure presented in this letter implements an ultrathin AIGaN structure grown by metal-organic chemical vapor deposition capped with AIN to maintain a high 2DEG density in the access regions. A selective wet etch using heated photoresist developer is used to selectively etch the AIN layer in the gate region to the AIGaN barrier. We have demonstrated a repeatable threshold voltage of +0.21 V with 4-nim AIGaN barrier layer thickness. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 30
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 47107167
- Full Text :
- https://doi.org/10.1109/LED.2009.2033083