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Valence band offset and interface stoichiometry at epitaxial Si3N4/Si(111) heterojunctions formed by plasma nitridation.
- Source :
- Applied Physics Letters; 11/30/2009, Vol. 95 Issue 22, p222104, 3p, 1 Black and White Photograph, 1 Chart, 3 Graphs
- Publication Year :
- 2009
-
Abstract
- Ultrathin β-Si<subscript>3</subscript>N<subscript>4</subscript>(0001) epitaxial films formed by N<subscript>2</subscript>-plasma nitridation of Si(111) substrates have been studied by photoelectron spectroscopy using synchrotron radiation. The valence band offset at the β-Si<subscript>3</subscript>N<subscript>4</subscript>/Si interface was determined by valence-band photoelectron spectra to be 1.8 eV. Furthermore, the Si 2p core-level emissions were analyzed for nitride (Si<superscript>4+</superscript>) and subnitride (Si<superscript>3+</superscript> and Si<superscript>+</superscript>) components to characterize the interface stoichiometry. In contrast to the interfaces formed by ammonia thermal nitridation and N<subscript>2</subscript>-plasma nitridation at room temperature, the interface formed by N<subscript>2</subscript>-plasma nitridation at high substrate temperature is very close to subnitride free with an abrupt composition transition. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 95
- Issue :
- 22
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 45610558
- Full Text :
- https://doi.org/10.1063/1.3269601