Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers.

Authors :: Cao, Q.
Yoon, S. F.
Tong, C. Z.
Ngo, C. Y.
Liu, C. Y.
Wang, R.
Zhao, H. X.
Source :: Applied Physics Letters; 11/9/2009, Vol. 95 Issue 19, p191101, 3p, 1 Chart, 3 Graphs
Publication Year :: 2009
Abstract: The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s. [ABSTRACT FROM AUTHOR]