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Calculation of critical layer thickness considering thermal strain in Si1-xGe/Si strained-layer...
- Source :
- Journal of Applied Physics; 1/1/1998, Vol. 83 Issue 1, p171, 3p, 1 Diagram, 2 Graphs
- Publication Year :
- 1998
-
Abstract
- Presents a study on the calculation of the critical layer thickness strain in Si1-xGe/Si strained-layer heterostructures. Heterostuctures and superlattices of Si1-Gex/Si; Theoretical model and calculation used to carry out the study; How the critical layer thickness is reduced.
- Subjects :
- HETEROSTRUCTURES
THICKNESS measurement
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 83
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 44936
- Full Text :
- https://doi.org/10.1063/1.366730