Anisotropic piezoeffect in microelectromechanical systems based on epitaxial Al0.5Ga0.5As/AlAs heterostructures.

A microelectromechanical system is created that has the form of a cantilever-fitted microbar with a cross-sectional area of several square micrometers. The system is formed by applying epitaxial AlGaAs layers on the GaAs(001) surface and selective chemical etching of the AlAs layer lying under the bar. Two micro-cantilevers that are made on the same GaAs(001) wafer and directed along the [110] and [1 $$ \bar 1 $$0] orthogonal diagonal axes are studied. The static and dynamic characteristics of the systems are studied by white light optical interferometry. The deflection of the bars as a function of the applied voltage is measured in the static mode. An opposite shift of orthogonal microcantilevers on which the same voltage is applied is considered as direct evidence of the efficiency of a piezoeffect-based microengine. The calculated parameters of the micro-electromechanical system, the sensitivity and eigenfrequency, are in good agreement with the measurements. [ABSTRACT FROM AUTHOR]