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Formation and coarsening of Ga droplets on focused-ion-beam irradiated GaAs surfaces.
- Source :
- Applied Physics Letters; 10/12/2009, Vol. 95 Issue 15, p153107, 3p, 3 Diagrams, 1 Graph
- Publication Year :
- 2009
-
Abstract
- We have investigated the formation and coarsening of Ga droplets on focused-ion-beam (FIB) irradiated GaAs surfaces. To separately examine formation and coarsening, Ga droplets were fabricated by Ga<superscript>+</superscript> FIB irradiation of GaAs substrates with and without pre-patterned holes. We determined the droplet growth rate and size distribution as a function of FIB energy following irradiation. The data suggest a droplet formation mechanism that involves Ga precipitation from a Ga-rich layer, followed by droplet coarsening via a combination of diffusion and Ostwald ripening or coalescence via droplet migration (dynamic coalescence). [ABSTRACT FROM AUTHOR]
- Subjects :
- GALLIUM arsenide
ELECTRON diffusion
FOCUSED ion beams
IRRADIATION
OSTWALD ripening
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 95
- Issue :
- 15
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 44665186
- Full Text :
- https://doi.org/10.1063/1.3229889