Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering.

As-doped ZnO films were grown by the radio frequency magnetron sputtering method. As the substrate temperature during growth was raised above ∼400 °C, the films changed from n type to p type. Hole concentration and mobility of ∼6×10¹⁷ cm^-3 and ∼6 cm² V^-1 s^-1 were achieved. The ZnO films were studied by secondary ion mass spectroscopy, x-ray photoelectron spectroscopy (XPS), low temperature photoluminescence (PL), and positron annihilation spectroscopy (PAS). The results were consistent with the As_Zn–2V_Zn shallow acceptor model proposed by Limpijumnong et al. [Phys. Rev. Lett. 92, 155504 (2004)]. The results of the XPS, PL, PAS, and thermal studies lead us to suggest a comprehensive picture of the As-related shallow acceptor formation. [ABSTRACT FROM AUTHOR]