Cite
Impact of device configuration on the temperature instability of Al–Zn–Sn–O thin film transistors.
MLA
Jae Kyeong Jeong, et al. “Impact of Device Configuration on the Temperature Instability of Al–Zn–Sn–O Thin Film Transistors.” Applied Physics Letters, vol. 95, no. 12, Sept. 2009, p. 123505. EBSCOhost, https://doi.org/10.1063/1.3236694.
APA
Jae Kyeong Jeong, Shinhyuk Yang, Doo-Hee Cho, Sang-Hee Ko Park, Chi-Sun Hwang, & Kyoung Ik Cho. (2009). Impact of device configuration on the temperature instability of Al–Zn–Sn–O thin film transistors. Applied Physics Letters, 95(12), 123505. https://doi.org/10.1063/1.3236694
Chicago
Jae Kyeong Jeong, Shinhyuk Yang, Doo-Hee Cho, Sang-Hee Ko Park, Chi-Sun Hwang, and Kyoung Ik Cho. 2009. “Impact of Device Configuration on the Temperature Instability of Al–Zn–Sn–O Thin Film Transistors.” Applied Physics Letters 95 (12): 123505. doi:10.1063/1.3236694.