Photoluminescence of InAs quantum dots grown on GaAs surface.

Authors :: Wang, J. Z.
Wang, J.Z.
Yang, Z.
Yang, C. L.
Yang, C.L.
Wang, Z. G.
Wang, Z.G.
Source :: Applied Physics Letters; 10/30/2000, Vol. 77 Issue 18, 1 Chart, 5 Graphs
Publication Year :: 2000
Abstract: InAs quantum dots (QDs) grown on GaAs surface are investigated. The observed abnormal photoluminescence (PL) properties, including extremely sharp high-energy peaks, almost temperature-independent linewidth, and fast thermal quenching, are discussed in terms of the strong quantum confinement effects due to the absence of a cap layer and the lack of carrier redistribution channel caused by the small number of QDs capable of contributing to PL and the high-density surface defects. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]