Temperature dependence of surface photovoltage of bulk semiconductors and the effect of surface passivation.

Surface photovoltage (SPV) of n-GaAs decreases both above and below a certain transition temperature. We explain this phenomenon in terms of a Schottky contact based model and relative dominance of thermal and nonthermal parts of the dark current. This also explains the observed increase of SPV of p-GaAs below room temperature. Our analysis is further confirmed from the temperature dependence of the SPV measurements on p-InP and n-InP samples. Surface passivation is seen to lower the transition temperature of n-GaAs. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]