Formation of Y[sub 2]O[sub 3] interface layer in a YMnO[sub 3]/Si ferroelectric gate structure.

During the crystallization of amorphous YMnO[sub 3] thin film on Si (100) at 870 °C in a dry O[sub 2] ambient, a nanoprecipitate layer was found between the YMnO[sub 3] and the Si substrate. Lattice image processing as well as high-resolution transmission electron microscopy showed that the nanoprecipitate layer was a cubic Y[sub 2]O[sub 3] phase. Also, it showed that a native oxide was consumed by the reaction with the Y atoms. This [111] Y[sub 2]O[sub 3] layer exhibited a local epitaxial relationship to the c-axis oriented (0001) YMnO[sub 3]. The formation of Y[sub 2]O[sub 3] phase and the consumption of native oxide at the YMnO[sub 3]/Si interface are due to the Y atom which is better than Mn in its ability to oxidize during heat treatment in O[sub 2] ambient. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]