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Problems and the progress made in modeling devices based on ionic materials.

Authors :
K. Thoma
Source :
Russian Journal of Electrochemistry; Jun2009, Vol. 45 Issue 6, p652-656, 5p
Publication Year :
2009

Abstract

Abstract  Computational simulation techniques have been extensively used to investigate physical phenomena in semiconductor devices with similar techniques utilized for the study of their competitors, ionic devices [1]. This paper is focusing on models based on the physics of carrier transport referring also shortly to equivalent circuit models, a much celebrated tool in the area of ionics. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
10231935
Volume :
45
Issue :
6
Database :
Complementary Index
Journal :
Russian Journal of Electrochemistry
Publication Type :
Academic Journal
Accession number :
43364127
Full Text :
https://doi.org/10.1134/S1023193509060056