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Problems and the progress made in modeling devices based on ionic materials.
- Source :
- Russian Journal of Electrochemistry; Jun2009, Vol. 45 Issue 6, p652-656, 5p
- Publication Year :
- 2009
-
Abstract
- Abstract  Computational simulation techniques have been extensively used to investigate physical phenomena in semiconductor devices with similar techniques utilized for the study of their competitors, ionic devices [1]. This paper is focusing on models based on the physics of carrier transport referring also shortly to equivalent circuit models, a much celebrated tool in the area of ionics. [ABSTRACT FROM AUTHOR]
- Subjects :
- SEMICONDUCTORS
IONS
COMPUTER simulation
ELECTRONIC circuits
ELECTRIC equipment
Subjects
Details
- Language :
- English
- ISSN :
- 10231935
- Volume :
- 45
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Russian Journal of Electrochemistry
- Publication Type :
- Academic Journal
- Accession number :
- 43364127
- Full Text :
- https://doi.org/10.1134/S1023193509060056