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Electronic structure of Lewis acid sites on high surface area aluminium fluorides: a combined XPS and ab initioinvestigation.

Authors :
Makarowicz, Anna
Bailey, Christine L.
Weiher, Norbert
Kemnitz, Erhard
Schroeder, Sven L. M.
Mukhopadhyay, Sanghamitra
Wander, Adrian
Searle, Barry G.
Harrison, Nicholas M.
Source :
Physical Chemistry Chemical Physics (PCCP); 7/21/2009, Vol. 11 Issue 27, p5664-5673, 10p
Publication Year :
2009

Abstract

High surface area (HS) AlF3samples have been examined by X-ray photoelectron spectroscopy (XPS). The experimentally observed binding energy (BE) shifts were analysed by reference to core level BEs obtained from ab initiototal energy calculations on a range of different, clean and hydroxylated α- and β-AlF3surfaces. Examination of the two components visible in the Al 2p emission indicates that surface Al3눫 can, depending on the local geometric structure, contribute to both a high BE peak at 77.0 eV and a low BE peak at 76.1 eV. Consequently, the areas under the peaks do not quantitatively correlate with surface area or Lewis acidity. However, a significant correlation between the number of surface Al centres with dangling F or OH groups and the appearance of an Al 2p emission component at a BE lower than in the α-AlF3bulk is predicted. The experimental F 1s emission data indicate that dangling F species are essentially absent. Examination of the O 1s emission suggests that HS AlF3handled at room temperature under any practical laboratory conditions, including glovebox environments, probably contains intrinsically a significant amount of OH groups and adsorbed water, which results in the covering of AlF3surfaces by dangling or bridging OH groups. These Brønsted acid species must be removed by treatment at higher temperature before HS AlF3reagents can fully develop their Lewis acidity. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
14639076
Volume :
11
Issue :
27
Database :
Complementary Index
Journal :
Physical Chemistry Chemical Physics (PCCP)
Publication Type :
Academic Journal
Accession number :
43363405
Full Text :
https://doi.org/10.1039/b821484k