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Low temperature sintering and microwave dielectric properties of MgNb2O6 ceramics.

Authors :
Tian, Z. Q.
Lin, L.
Source :
Journal of Materials Science: Materials in Electronics; Sep2009, Vol. 20 Issue 9, p867-871, 5p, 1 Diagram, 6 Graphs
Publication Year :
2009

Abstract

The effects of co-doped CuO and B<subscript>2</subscript>O<subscript>3</subscript> addition on the sintering temperature, microstructure and microwave dielectric properties of MgNb<subscript>2</subscript>O<subscript>6</subscript> ceramics prepared with conventional solid-state route were investigated. When both CuO and B<subscript>2</subscript>O<subscript>3</subscript> were added, the MgNb<subscript>2</subscript>O<subscript>6</subscript> ceramics were not only sintered at 1000 °C but also improved the Qf value. MgNb<subscript>2</subscript>O<subscript>6</subscript> ceramics can be well sintered to approach to 98.1% theoretical density with 2.0 wt.% CuO–B<subscript>2</subscript>O<subscript>3</subscript> additive due to its liquid phase effect. With 2.0 wt.% CuO–B<subscript>2</subscript>O<subscript>3</subscript>, a dielectric constant of 21.5, a Qf value of 108,000(GHz) and a τ<subscript> f</subscript> value of −44 ppm/°C of MgNb<subscript>2</subscript>O<subscript>6</subscript> ceramics doped with CuO–B<subscript>2</subscript>O<subscript>3</subscript> sintered at 1050 °C for 2 h are obtained. The variation of ε<subscript>r</subscript>, Qf and τ<subscript> f</subscript> were also explained based on the difference in microstructures. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09574522
Volume :
20
Issue :
9
Database :
Complementary Index
Journal :
Journal of Materials Science: Materials in Electronics
Publication Type :
Academic Journal
Accession number :
43351280
Full Text :
https://doi.org/10.1007/s10854-008-9808-9