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High-performance dinaphtho-thieno-thiophene single crystal field-effect transistors.
- Source :
- Applied Physics Letters; 7/13/2009, Vol. 95 Issue 2, p022111, 3p, 3 Graphs
- Publication Year :
- 2009
-
Abstract
- We fabricated high-performance single crystal organic field-effect transistors (SC-OFETs) based on dinaphtho[2,3-b:2<superscript>′</superscript>,3<superscript>′</superscript>-f]thieno[3,2-b]-thiophene (DNTT). Among various device geometries and contact types, best performance is obtained for a lamination-type SC-OFET composed of a Cytop-treated SiO<subscript>2</subscript> gate dielectric and top-contact gold/tetrathiafulvalene-tetracyanoquinodimethane electrodes, which results in hysteresis-free device characteristics with optimum mobility of 8.3 cm<superscript>2</superscript>/V s and an on/off ratio of >10<superscript>8</superscript>. The achieved performance is promising for use of the air-stable DNTT in future studies of intrinsic properties of molecular crystals. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 95
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 43277351
- Full Text :
- https://doi.org/10.1063/1.3183509