Back to Search
Start Over
1.5 mum wavelength InGaAs/InGaAsP distributed feedback multi-quantum-well lasers grown by....
- Source :
- Applied Physics Letters; 11/4/1991, Vol. 59 Issue 19, p2375, 3p, 2 Black and White Photographs, 1 Diagram, 4 Graphs
- Publication Year :
- 1991
-
Abstract
- Examines the epitaxial growth of strained-layer InGaAs/InGaAsP multiquantum well distributed feedback (DFB) laser. Location of the DFB laser in the multiquantum well; Exhibition of defect-free indium phosphide regrowth; Operation of the buried-hererostructures 6-quantum well DFB lasers.
- Subjects :
- SEMICONDUCTOR lasers
EPITAXY
QUANTUM wells
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 59
- Issue :
- 19
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4322690
- Full Text :
- https://doi.org/10.1063/1.106020