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Growth of epitaxial GaN films by pulsed laser deposition.
- Source :
- Applied Physics Letters; 7/7/1997, Vol. 71 Issue 1, p102, 3p, 1 Diagram, 1 Chart, 7 Graphs
- Publication Year :
- 1997
-
Abstract
- Examines the growth of crystalline quality epitaxial gallium nitride thin films by pulsed laser deposition. Generation of an x-ray diffraction rocking curve linewidth; Indication of the crystallinity degree by the ion channeling minimum yield; Reflection of gallium desorption in a decreasing growth rate.
- Subjects :
- THIN films
GALLIUM nitride
EPITAXY
PULSED laser deposition
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 71
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4319722
- Full Text :
- https://doi.org/10.1063/1.119441