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Diffusion-limited interaction of dislocation loops and interstitials during dry oxidation in....
- Source :
- Applied Physics Letters; 7/25/1994, Vol. 65 Issue 4, p436, 3p, 3 Graphs
- Publication Year :
- 1994
-
Abstract
- Examines the interaction of implantation-induced dislocation loops in crystals and interstitials in silicon. Experiments under dry oxidation conditions; Consideration of the interaction as a diffusion limited process; Agreement of simulations with secondary ion mass spectroscopy.
- Subjects :
- DISLOCATIONS in crystals
SILICON
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 65
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4319454
- Full Text :
- https://doi.org/10.1063/1.112325