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Low-leakage-current metal-insulator-semiconductor-insulator-metal photodetector on silicon...
- Source :
- Applied Physics Letters; 9/27/1999, Vol. 75 Issue 13, p1976, 3p, 1 Black and White Photograph, 1 Diagram, 2 Graphs
- Publication Year :
- 1999
-
Abstract
- Shows that the leakage current through a metal-semiconductor-metal-photodetector can be reduced by placing a thin interfacial silicon dioxide layer between the Schottky metal and the silicon substrate. Factor reduction in leakage-current density.
- Subjects :
- SEMICONDUCTORS
METAL insulator semiconductors
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 75
- Issue :
- 13
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4298880
- Full Text :
- https://doi.org/10.1063/1.124890