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Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy.
- Source :
- Applied Physics Letters; 8/30/1999, Vol. 75 Issue 9, p1308, 3p, 1 Diagram, 3 Graphs
- Publication Year :
- 1999
-
Abstract
- Presents silicon resonant interband tunnel diodes that demonstrate negative differential resistance at room temperature with peak-to-valley current ratios greater than 2. Use of low-temperature molecular-beam epitaxy to grow the structures; Atomic distribution profiles of the as-grown and annealed structures.
- Subjects :
- SILICON
LIGHT emitting diodes
MOLECULAR beam epitaxy
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 75
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4283641
- Full Text :
- https://doi.org/10.1063/1.124677