Study of strain in partially relaxed Ge epilayers on Si(100) substrate.

Authors :: Jiang, Z.M.
Pei, C.W.
Zhou, X.F.
Jiang, W.R.
Shi, B.
Liu, X.H.
Xun Wang
Jia, Q.J.
Zheng, W.L.
Jiang, X.M.
Source :: Applied Physics Letters; 7/19/1999, Vol. 75 Issue 3, p370, 3p, 4 Graphs
Publication Year :: 1999
Abstract: Determines the levels of strains in germanium (Ge) epilayers on silicon(100) substrates grown by molecular beam epitaxy using antimony as a surfactant. Direction Ge-Ge mode peaks as revealed by Raman spectra; Relationship between Raman shift of this mode and strain in partially relaxed samples.