Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on...

Authors :: Choopun, S.
Vispute, R. D.
Noch, W.
Balsamo, A.
Sharma, R.P.
Venkatesan, T.
Iliadis, A.
Look, D.C.
Source :: Applied Physics Letters; 12/20/1999, Vol. 75 Issue 25, p3947, 3p, 4 Black and White Photographs, 9 Graphs
Publication Year :: 1999
Abstract: Studies the influence of oxygen pressure on the epitaxy, surface morphology and optoelectronic properties of zinc oxide (ZnO) thin films grown on sapphire by pulsed-laser deposition. Rutherford backscattering and ion channeling in conjuction with atomic force microscopy; Impact of growth and defects on electron mobility, free-electron concentration and luminescence.

Subjects :: ZINC oxide
THIN films
PULSED laser deposition
SCATTERING (Physics)

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