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Size distribution of end-of-range dislocation loops in silicon-implanted silicon.
- Source :
- Applied Physics Letters; 3/18/1996, Vol. 68 Issue 12, p1654, 3p, 3 Black and White Photographs, 3 Graphs
- Publication Year :
- 1996
-
Abstract
- Examines the size distribution of end-of-range (EOR) dislocation loops in silicon-implanted silicon. Fabrication of an ultrashallow junction in complementary metal-oxide semiconductor; Dependence of EOR dislocation loops on the implantation; Use of slow furnace annealing and transmission electron microscopy specimens.
- Subjects :
- DISLOCATIONS in crystals
SILICON
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 68
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4189901
- Full Text :
- https://doi.org/10.1063/1.115895