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Improvement of punchthrough-induced gate-oxide breakdown in n-channel metal-oxide-semiconductor....
- Source :
- Applied Physics Letters; 7/27/1992, Vol. 61 Issue 4, p453, 3p, 3 Graphs
- Publication Year :
- 1992
-
Abstract
- Investigates the gate-electric breakdown in small n-channel metal-oxide-semiconductor field-effect transistors. Acceleration of the breakdown; Effect of the rapid thermal nitridation of the gate oxide in the transistors; Increase of the charge to the breakdown.
- Subjects :
- ELECTRIC breakdown
METAL oxide semiconductor field-effect transistors
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 61
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4189781
- Full Text :
- https://doi.org/10.1063/1.107882