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Anomalous temperature dependence of diode saturation currents in polycrystalline silicon thin-film solar cells on glass.
- Source :
- Journal of Applied Physics; May2009, Vol. 105 Issue 10, p103705-103712, 7p, 2 Diagrams, 1 Chart, 5 Graphs
- Publication Year :
- 2009
-
Abstract
- Temperature dependent Suns-V<subscript>oc</subscript> measurements are performed on four types of polycrystalline silicon thin-film solar cells on glass substrates, all of which are made by solid phase crystallization/epitaxy of amorphous silicon from plasma enhanced chemical vapor deposition or e-beam evaporation. Under the two-diode model, the diode saturation currents corresponding to n=1 recombination processes for these polycrystalline silicon p-n junction cells follow an Arrhenius law with activation energies about 0.15–0.18 eV lower than that of single-crystal silicon p-n diodes of 1.206 eV, regardless of whether the cells have an n- or p-type base. This discrepancy manifests itself unambiguously in a reduced temperature sensitivity of the open-circuit voltage in thin-film polycrystalline silicon solar cells compared to single-crystal silicon cells with similar voltages. The physical origin of the lowered activation energy is attributed to subgap levels acting either as minority carrier traps or shallow recombination centers. [ABSTRACT FROM AUTHOR]
- Subjects :
- POLYCRYSTALS
SILICON solar cells
THIN films
GLASS
DIODES
CHEMICAL vapor deposition
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 105
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 40418618
- Full Text :
- https://doi.org/10.1063/1.3131665