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Molecular-dynamics simulations of stacking-fault-induced dislocation annihilation in prestrained ultrathin single-crystalline copper films.
- Source :
- Journal of Applied Physics; May2009, Vol. 105 Issue 9, p093515-093523, 8p, 3 Color Photographs, 2 Graphs
- Publication Year :
- 2009
-
Abstract
- We report results of large-scale molecular-dynamics simulations of dynamic deformation under biaxial tensile strain of prestrained single-crystalline nanometer-scale-thick face-centered cubic (fcc) copper films. Our results show that stacking faults, which are abundantly present in fcc metals, may play a significant role in the dissociation, cross slip, and eventual annihilation of dislocations in small-volume structures of fcc metals. The underlying mechanisms are mediated by interactions within and between extended dislocations that lead to annihilation of Shockley partial dislocations or formation of perfect dislocations. Our findings demonstrate dislocation starvation in small-volume structures with ultrathin film geometry, governed by a mechanism other than dislocation escape to free surfaces, and underline the significant role of geometry in determining the mechanical response of metallic small-volume structures. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 105
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 39786067
- Full Text :
- https://doi.org/10.1063/1.3120916