Shot noise analysis in quasi one-dimensional Field Effect Transistors.

We present a novel method for the evaluation of shot noise in quasi one-dimensional field-effect transistors, derived by means of a statistical approach within the second quantization formalism, which manages to include both the effects of Pauli exclusion and Coulomb interactions. The method has been applied to Carbon Nanotubes and Silicon Nanowire Transistors. We show that noise can significantly differ from that obtained by means of the Landauer-Büttiker’s formula and that the main noise source is represented by the partition noise. [ABSTRACT FROM AUTHOR]