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Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment.
- Source :
- Journal of Applied Physics; Apr2009, Vol. 105 Issue 8, p083713-083719, 6p, 5 Graphs
- Publication Year :
- 2009
-
Abstract
- We studied the effects of hydrogen plasma treatment on the electrical and optical properties of ZnO films deposited by radio frequency magnetron sputtering. It is found that the ZnO:H film is highly transparent with the average transmittance of 92% in the visible range. Both carrier concentration and mobility are increased after hydrogen plasma treatment, correspondingly, the resistivity of the ZnO:H films achieves the order of 10<superscript>-3</superscript> Ω cm. We suggest that the incorporated hydrogen not only passivates most of the defects and/or acceptors present, but also introduces shallow donor states such as the V<subscript>O</subscript>-H complex and the interstitial hydrogen H<subscript>i</subscript>. Moreover, the annealing data indicate that H<subscript>i</subscript> is unstable in ZnO, while the V<subscript>O</subscript>-H complex remains stable on the whole at 400 °C, and the latter diffuses out when the annealing temperature increases to 500 °C. These results make ZnO:H more attractive for future applications as transparent conducting electrodes. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 105
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 38611774
- Full Text :
- https://doi.org/10.1063/1.3108543