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High resolution x-ray photoemission study of plasma oxidation of indium-tin-oxide thin film surfaces.

Authors :
Christou, V.
Etchells, M.
Renault, O.
Dobson, P. J.
Salata, O. V.
Beamson, G.
Egdell, R. G.
Source :
Journal of Applied Physics; 11/1/2000, Vol. 88 Issue 9, p5180, 8p, 1 Diagram, 3 Charts, 6 Graphs
Publication Year :
2000

Abstract

Reports on findings of a high resolution x-ray photoemission study of plasma oxidation of indium-tin-oxide thin films surfaces. Plasma oxidation n-type doping in the near surface region; Shift to low binding energy for both core and valence band photoemission features; Fixed conduction band of the indium-tin-oxide.

Details

Language :
English
ISSN :
00218979
Volume :
88
Issue :
9
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
3745672
Full Text :
https://doi.org/10.1063/1.1312847