Electrical properties of ferroelectric BaTiO3 thin film on SrTiO3 buffered GaAs by laser molecular beam epitaxy.

Ferroelectric BaTiO₃ thin films were epitaxially grown on (001) GaAs substrate using SrTiO₃ as a buffer layer by laser molecular beam epitaxy. The perovskite SrTiO₃ buffer layer present a body centered cubic structure by formation of an interfacial layer with the [100]SrTiO₃∥[110]GaAs in-plane relationship. Thereupon, a highly c-oriented BaTiO₃ thin film was grown on SrTiO₃/GaAs in a layer by layer mode. Enhanced electrical properties of the heteroepitaxial structure were demonstrated. The BaTiO₃(150 nm)/SrTiO₃/GaAs system demonstrates hysteresis loops with a remnant polarization of 2.5 μC/cm² at 600 kV/cm and a small leakage current density of 2.9×10^-7 A/cm² at 200 kV/cm. [ABSTRACT FROM AUTHOR]